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APT17N80BC3 APT17N80SC3
800V 17A
0.290
D3PAK
TO-247
Super Junction MOSFET
C OLMOS O
Power Semiconductors
* Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv/ dt
D G S
All Ratings: TC = 25C unless otherwise specified.
APT17N80BC3_SC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
800 17 51 20 30 208 1.67 -55 to 150 300 50 17 0.5
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 640V, ID = 17A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
IAR EAR EAS
Single Pulse Avalanche Energy
670
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
800 0.25 0.5 0.29 25 250
(VGS = 10V, 11A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
2.10
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
050-7142 Rev D
4-2004
100
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT17N80BC3_SC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 0 to10V VDD = 400V ID = 17A @ 25C RESISTIVE SWITCHING VGS = 10V VDD = 400V ID = 17A @ 125C RG = 4.7 6 INDUCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 17A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 533V, VGS = 15V ID = 17A, RG = 5
MIN
TYP
MAX
UNIT
2255 1045 55 90 11 45 25 15 70 6 245 140 425 170
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
82 9
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
17 51 1 550 15 6
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -17A)
1.2
Reverse Recovery Time (IS = -17A, dl S /dt = 100A/s, VR = 400V) Reverse Recovery Charge (IS = -17A, dl S /dt = 100A/s, VR = 400V) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.60 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 115.92mH, RG = 25, Peak IL = 3.4A 5 IS = -17A di/dt = 100A/s VR = 480V TJ = 125C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70
, THERMAL IMPEDANCE (C/W)
0.60 0.9 0.50 0.7 0.40 0.30 0.20 0.10 0 0.5 0.3 SINGLE PULSE 0.1 0.05 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 1.0 Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
4-2004
050-7142 Rev D
Z
JC
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
50 45 40 35 30 25 20 15 10 5 0 VGS =15 & 10V
APT17N80BC3_SC3
RC MODEL Junction temp (C) 0.259 Power (watts) 0.341 Case temperature (C) 0.135 0.0050
6.5V 6V 5.5V 5V 4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80
NORMALIZED TO V = 10V @ 8.5A
GS
50 45
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
40 35 30 25 20 15 10 5 0
TJ = -55C TJ = +25C
TJ = +125C 012 34 567 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
5 10 15 20 25 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
30
18 16
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
14 12 10 8 6 4 2 0 25 50 75 100 125 150
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75
100 125 150
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3.0
I
D
= 8.5A
TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
V
2.0 1.5 1.0 0.5 0 -50
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.5
GS
= 10V
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7142 Rev D
4-2004
Typical Performance Curves
51
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT17N80BC3_SC3
ID, DRAIN CURRENT (AMPERES)
100S
5
C, CAPACITANCE (pF)
10
Ciss 1000 Coss 100 Crss 10
1
1mS 10mS TC =+25C TJ =+150C SINGLE PULSE
.1
1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 17A
200 100
12 VDS= 160V 8 VDS= 400V VDS= 640V
TJ =+150C TJ =+25C
10
4
20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 90 80
td(on) and td(off) (ns)
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50
V
DD G
1
= 533V
td(off) 40
V
DD G
R
= 5
T = 125C
J
L = 100H
tf
70 60 50 40 30 20 10 0 5
= 533V
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
30
20
tr
10 td(on) 20 25 30 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
15
20 25 30 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1200
0
5
10
15
800
= 533V
R
= 5
T = 125C
J
Eon
SWITCHING ENERGY (J)
1000 800 600 Eon 400 200 0
V I
DD
Eoff
SWITCHING ENERGY (J)
600
L = 100H E ON includes diode reverse recovery.
400
= 533V
4-2004
200 Eoff 0
D J
= 17A
T = 125C L = 100H EON includes diode reverse recovery.
050-7142 Rev D
20 25 30 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
5
10
15
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT17N80BC3_SC3
10 %
Gate Voltage
90%
TJ = 125 C
t
Drain Current
Gate Voltage T = 125 C J
d(off)
td(on)
Drain Current
90%
Drain Voltage
90% 5% tr 10 % 5%
t f 10%
Drain Voltage
0
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15 (.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7142 Rev D
Gate Drain Source
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Drain) and Leads are Plated
4-2004
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
3.81 (.150) 4.06 (.160) (Base of Lead)

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